三过氧化三丙酮(TATP)是一种新型的液体炸药。由于TATP分子中不含硝基, 传统的一些基于硝基特征检测的技术无法对其进行有效识别检测; 而现有针对TATP的检测技术存在预处理繁琐, 检测时间长, 灵敏度低及需要特殊设备等缺陷, 无法满足现场实时、快速检测的需要。该文提出了一种基于声表面波(SAW)技术、针对TATP检测的新型传感器, 将高分子材料技术与SAW技术相结合, 分别利用新型树枝状高分子敏感材料的高灵敏度和选择性, 与SAW传感器高质量敏感性的优点, 对TATP进行快速、可靠检测, 从而为实现快速防护做好准备。结果表明, 该传感器检测阈值最低可达0.5×10-6, 响应速度可达到秒级。

设计了Si 衬底上Ge 薄膜共振腔增强型光电探测器的器件结构，理论计算了上下反射镜Si/SiO2的对数、吸收区Ge薄膜的厚度、有源区面积等参数对器件的外量子效率、带宽等性能的影响。当器件上下反射镜Si/SiO2的对数分别为2 和3，Ge 薄膜的厚度为0.46 μm ，器件的台面面积小于176 μm2 时，探测器在中心波长1.55 μm 处的外量子效率达到0.64，比普通结构提高了30 倍，同时器件的带宽达到40 GHz。

近年来半导体材料主要朝两个方向发展：一方面是材料工程，即通过不断探索扩展新的半导体材料实现；另一方面是能带工程，即通过改变已知材料的维度进而实现能带的调节。准零维半导体量子点就是通过改变其尺寸调控能带的典型代表。主要论述了准零维量子点激光器发展过程中遇到的一些瓶颈问题。

We investigate InAs/GaAs quantum dot (QD) lasers grown by gas source molecular beam epitaxy with different growth temperatures for InAs dot layers. The same laser structures are grown, but the growth temperatures of InAs dot layers are set as 425 and 500 oC, respectively. Ridge waveguide laser diodes are fabricated, and the characteristics of the QD lasers are systematically studied. The laser diodes with QDs grown at 425 oC show better performance, such as threshold current density, output power, internal quantum efficiency, and characteristic temperature, than those with QDs grown at 500 oC. This finding is ascribed to the higher QD density and more uniform size distribution of QDs achieved at 425 oC.

We report on the lasing characteristics of a two-color InAs/InP quantum dots (QDs) laser at a low temperature. Two lasing peaks with a tunable gap are simultaneously observed. At a low temperature of 80 K, a tunable range greater than a 20-nm wavelength is demonstrated by varying the injection current from 30 to 500 mA. Under a special condition, we even observe three lasing peaks, which are in contrast to those observed at room temperature. The temperature coefficient of the lasing wavelength was obtained for the two colors in the 80-280 K temperature range, which is lower than that of the reference quantum well (QW) laser working in the same wavelength region.